DETECTOR Factory, lwm tus neeg - Tuam Tshoj DETECTOR Manufacturers

355nm PIB

Nws yog Si avalanche photodiode nrog loj photosensitive nto thiab txhim kho UV.Nws muab siab rhiab heev ntawm UV rau NIR.

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800nm PIB

Nws yog Si avalanche photodiode uas muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 800nm.

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905nm PIB

Nws yog Si avalanche photodiode uas muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 905nm.

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1064nm PIB

Nws yog Si avalanche photodiode uas muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 1064nm.Teb: 36 A / W ntawm 1064 nm.

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1064nm APD Modules

Nws yog txhim kho Si avalanche photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no lub teeb liab yuav tsum tau amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-cim amplification.

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InGaAs APD Modules

Nws yog indium gallium arsenide avalanche photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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Plaub-quadrant APD

Nws muaj plaub tib chav ntawm Si avalanche photodiode uas muab siab rhiab heev xws li UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 40 A / W ntawm 1064 nm.

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Plaub-quadrant APD modules

Nws muaj plaub tib chav nyob ntawm Si avalanche photodiode nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no cov teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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850nm Si PIN modules

Nws yog 850nm Si PIN photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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900nm Si PIN photodiode

Nws yog Si PIN photodiode uas ua haujlwm nyob rau hauv kev tsis ncaj ncees lawm thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 930nm.

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1064nm Si PIN photodiode

Nws yog Si PIN photodiode uas ua haujlwm nyob rau hauv kev tsis ncaj ncees lawm thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 0.3A / W ntawm 1064 nm.

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Fiber Si PIN modules

Cov teeb liab kho qhov muag tau hloov mus rau hauv cov teeb liab tam sim no los ntawm kev siv cov khoom siv kho qhov muag.Si PIN module yog nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no lub teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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