850nm Si PIN modules

Qauv: GD4213Y/GD4251Y/GD4251Y-A/GD42121Y

Lus piav qhia luv luv:

Nws yog 850nm Si PIN photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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Technical Parameter

Khoom cim npe

Nta

Kev kub ceev teb
Siab rhiab heev

Daim ntawv thov

Laser fuse

Photoelectric parameter (@Ta = 22 ± 3 ℃)

Yam khoom #	Ntim qeb	Txoj kab uas hla ntawm photosensitive nto (mm)	Teb	Lub sij hawm sawv (ns)	Dynamic ntau yam (dB)	Ua haujlwm voltage (V)	Suab nrov nrov (mV)	Sau ntawv
Yam khoom #	Ntim qeb	Txoj kab uas hla ntawm photosensitive nto (mm)	L = 850nm, φ_e= 1 mW		L = 850 nm	Ua haujlwm voltage (V)	Suab nrov nrov (mV)	Sau ntawv
GD4213 Y	TO-8	2	110	12	20	± 5 ± 0.3	12	-
wb 4251y		2	130	12	20	± 6 ± 0.3	40	(Lub kaum sab xis ntawm qhov tshwm sim: 0 °, transmittance ntawm 830nm ~ 910nm ≥90%
GD4251Y-A		10 × 1.5 hli	130	18	20	± 6 ± 0.3	40
GD42121 Y		10 × 0.95 hli	110	20	20	± 5 ± 0.1	25
Lus Cim: Kev kuaj load ntawm GD4213Y yog 50Ω, lwm tus yog 1MΩ