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900nm Si PIN photodiode

900nm Si PIN photodiode

Qauv: GT101F0.2 / GT101F0.5 / GT101F1 / GT101F2 / GT101F4 / GD3251Y / GT101F8 / GD3252Y

Lus piav qhia luv luv:

Nws yog Si PIN photodiode uas ua haujlwm nyob rau hauv kev tsis ncaj ncees lawm thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 930nm.


  • f614 ua
  • 6 tx49b1
  • 46b79 ib
  • 374c 3

Technical Parameter

Khoom cim npe

Nta

  • Frontside illuminated qauv
  • Tsawg tsaus nti tam sim no
  • Siab teb
  • Kev ntseeg siab

Daim ntawv thov

  • Optical fiber kev sib txuas lus, kev paub thiab ntau yam
  • Optical detection ntawm UV rau NIR
  • Fast optical-mem tes nrhiav kom pom
  • Tswj cov tshuab rau kev lag luam

Photoelectric parameter (@Tas = 25 ℃)

Yam khoom #

Ntim qeb

Txoj kab uas hla ntawm photosensitive nto (mm)

Spectral teb ntau yam

(nm)

 

 

Peak teb wavelength

(nm)

Kev teb (A/W)

L = 900 nm

 

Lub sij hawm sawv

L = 900 nm

VR= 15 V

RL= 50Ω(n)

Tsaus tam sim no

VR= 15 V

(nA)

Kev sib txuas capacitance VR= 15 V

f = 1 MHz

(pF)

Breakdown voltage

(V)

 

GT101F 0.2

Coaxial Type II, 5501, TO-46,

Plug hom

F0.2

 

 

4-1100 Nws

 

 

930 ua

 

 

0.63 ib

4

0.1

0.8 ua

> 200

GT101F 0.5

F0.5

5

0.1

1.2

GT101F1

F1.0

5

0.1

2.0

GT101F 2

TO-5

F 2.0

7

0.5

6.0

GT101F4

T0-8

F4.0

10

1.0

20.0 Nws

GD3251 Y

TO-8

F6.0

20

10

30

GT101F8

T0-8

f8.0 ua

20

3.0

70.0 ua

GD3252 Y

T0-8

5.8 × 5.8 hli

25

10

35


 


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