800nm PIB
Nta
- Frontside illuminated tiaj tus nti
- Kev kub ceev teb
- Siab APD nce
- Tsawg junction capacitance
- Tsawg suab nrov
Daim ntawv thov
- Laser ntau yam
- Laser radar
- Laser ceeb toom
Photoelectric parameter(@Ta = 22 ± 3 ℃)
| Yam khoom # | Ntim qeb | Txoj kab uas hla ntawm photosensitive nto (mm) | Spectral teb ntau yam (nm) |
Peak teb wavelength | Teb L = 800 nm φ e = 1μW M = 100 (A/W) | Teb sijhawm L = 800 nm RL= 50Ω (ns) | Tsaus tam sim no M = 100 (nA) | Kub Coefficient T = -40 ℃ ~ 85 ℃ (V / ℃)
| Tag nrho capacitance M = 100 f = 1 MHz (pF)
| Breakdown voltage IR= 10 μA (V) | ||
| Ntaus. | Max. | Min | Max | |||||||||
| GD5210Y-1-2-TO46 | TSI-46 | 0.23 |
400-1100 Nws
|
800 |
55
|
0.3 | 0.05 Nws | 0.2 | 0.5 | 1.5 | 80 | 160 |
| GD5210Y-1-5-TO46 | TSI-46 | 0.50 ib | 0.10 | 0.4 | 3.0 | |||||||
| GD5210Y-1-2-LCC3 | LCC 3 | 0.23 | 0.05 Nws | 0.2 | 1.5 | |||||||
| GD5210Y-1-5-LCC3 | LCC 3 | 0.50 ib | 0.10 | 0.4 | 3.0 | |||||||
