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1064nm Si PIN photodiode

1064nm Si PIN photodiode

Qauv: GT102Ф0.2 / GT102Ф0.5 / GT102Ф1 / GT102Ф2 / GT102Ф4 / GD3310Y / GD3217Y

Lus piav qhia luv luv:

Nws yog Si PIN photodiode uas ua haujlwm nyob rau hauv kev tsis ncaj ncees lawm thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 0.3A / W ntawm 1064 nm.


  • f614 ua
  • 6 tx49b1
  • 46b79 ib
  • 374c 3

Technical Parameter

Khoom cim npe

Nta

  • Frontside illuminated qauv
  • Tsawg tsaus nti tam sim no
  • Siab teb
  • Kev ntseeg siab

Daim ntawv thov

  • Optical fiber kev sib txuas lus, kev paub thiab ntau yam
  • Optical detection ntawm UV rau NIR
  • Fast optical-mem tes nrhiav kom pom
  • Tswj cov tshuab rau kev lag luam

Photoelectric parameter (@Tas = 25 ℃)

Yam khoom #

Ntim qeb

Txoj kab uas hla ntawm photosensitive nto (mm)

Spectral teb ntau yam

(nm)

 

 

Peak teb wavelength

(nm)

Kev teb (A/W)

L = 1064 nm

 

Lub sij hawm sawv

L = 1064 nm

VR= 40 V

RL= 50Ω(n)

Tsaus tam sim no

VR= 40 V

(nA)

Kev sib txuas capacitance VR= 40 V

f = 1 MHz

(pF)

Breakdown voltage

(V)

 

GT102F 0.2

Coaxial Type II, 5501, TO-46

Plug hom

F0.2

 

 

 

4-1100 Nws

 

 

 

980 ua

 

 

0.3

10

0.5

0.5

100

GT102F 0.5

F0.5

10

1.0

0.8 ua

GT102F1

F1.0

12

2.0

2.0

GT102F2

TO-5

F 2.0

12

3.0

5.0

GT102F4

TO-8

F4.0

20

5.0

12.0 Nws

GD 3310 Y

TO-8

f8.0 ua

30

15

50

GD 3217 Y

TSI-20

F10.0

50

20

70

 

 


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