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InGaAs APD Modules

InGaAs APD Modules

Qauv: GD6510Y/GD6511Y/GD6512Y

Lus piav qhia luv luv:

Nws yog indium gallium arsenide avalanche photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.


  • f614 ua
  • 6 tx49b1
  • 46b79 ib
  • 374c 3

Technical Parameter

Khoom cim npe

Nta

  • Frontside illuminated tiaj tus nti
  • Kev kub ceev teb
  • High rhiab heev ntawm detector

Daim ntawv thov

  • Laser ntau yam
  • Laser kev sib txuas lus
  • Laser ceeb toom

Photoelectric parameter(@Ta = 22 ± 3 ℃)

Yam khoom #

 

 

Ntim qeb

 

 

Txoj kab uas hla ntawm photosensitive nto (mm)

 

 

Spectral teb ntau yam

(nm)

 

 

Breakdown voltage

(V)

Teb

M = 10

L = 1550 nm

(kV/W)

 

 

 

 

Lub sij hawm sawv

(ns)

Bandwidth

(MHz)

Kub Coefficient

Ta= -40 ℃ ~ 85 ℃

(V / ℃)

 

Lub suab sib npaug zog (pW / √Hz)

 

Concentricity (μm)

Hloov hom hauv lwm lub tebchaws

GD6510 Y

 

 

TO-8

 

0.2

 

 

1000-1700 Nws

30 x70

340

5

70

0.12

0.15

≤ 50

C3059-1550-R2A

GD6511 Y

0.5

10

35

0.21 ib

GD6512 Y

0.08 ib

2.3

150

0.11

C3059-1550-R08B


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