1064nm APD Modules

Qauv: GD6212Y/GD6213Y/GD6219Y

Lus piav qhia luv luv:

Nws yog txhim kho Si avalanche photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no lub teeb liab yuav tsum tau amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-cim amplification.

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Technical Parameter

Khoom cim npe

Nta

Frontside illuminated tiaj tus nti
Kev kub ceev teb
Siab APD nce

Daim ntawv thov

Laser ntau yam
Laser kev sib txuas lus
Laser ceeb toom

Photoelectric parameter (@Ta = 22 ± 3 ℃)

Yam khoom #	Ntim qeb	Txoj kab uas hla ntawm photosensitive nto (mm)	Spectral teb ntau yam (nm)	Breakdown voltage (V)	Teb M = 100 L = 1064 nm (kV/W)	Lub sij hawm sawv (ns)	Bandwidth (MHz)	Kub Coefficient T = -40 ℃ ~ 85 ℃ (V / ℃)	Lub suab sib npaug zog (pW / √Hz)	Concentricity (μm)	Hloov hom hauv lwm lub tebchaws
GD6212 Y	TO-8	0.8 ua	40-1100 Nws	350-500 Nws	150	8.8 ib	40	2.2	0.15	≤ 50	c30950 ua
GD 6213 Y		0.8 ua			200	2	175	2.2	0.15		C30659-1060-R8BH
GD6219 Y		3			280	7	50	2.4	0.27 ib		C30659-1060-3A