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InGaAs APD Modules

Nws yog indium gallium arsenide avalanche photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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Plaub-quadrant APD

Nws muaj plaub tib chav ntawm Si avalanche photodiode uas muab siab rhiab heev xws li UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 40 A / W ntawm 1064 nm.

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Plaub-quadrant APD modules

Nws muaj plaub tib chav nyob ntawm Si avalanche photodiode nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no cov teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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850nm Si PIN modules

Nws yog 850nm Si PIN photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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900nm Si PIN photodiode

Nws yog Si PIN photodiode uas ua haujlwm nyob rau hauv kev tsis ncaj ncees lawm thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 930nm.

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1064nm Si PIN photodiode

Nws yog Si PIN photodiode uas ua haujlwm nyob rau hauv kev tsis ncaj ncees lawm thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 0.3A / W ntawm 1064 nm.

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Fiber Si PIN modules

Cov teeb liab kho qhov muag tau hloov mus rau hauv cov teeb liab tam sim no los ntawm kev siv cov khoom siv kho qhov muag.Si PIN module yog nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no lub teeb liab yuav tsum tau amplified thiab hloov mus rau voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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Plaub-quadrant Si PIN

Nws muaj plaub yam tib yam ntawm Si PIN photodiode uas ua haujlwm nyob rau hauv rov qab thiab muab siab rhiab heev xws li UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 0.5 A / W ntawm 1064 nm.

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Plaub-quadrant Si PIN modules

Nws muaj singled los yog doubled plaub tib units ntawm Si PIN photodiode nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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UV txhim kho Si PIN

Nws yog Si PIN photodiode nrog txhim kho UV, uas ua haujlwm nyob rau hauv qab thiab muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 800nm.Teb: 0.15 A / W ntawm 340 nm.

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1064nm YAG Laser -15mJ-5

Nws yog passively Q-hloov Nd: YAG laser nrog 1064nm wavelength, ≥15mJ ncov zog, 1 ~ 5hz (kho) mem tes repetition tus nqi thiab ≤8mrad divergence kaum.Tsis tas li ntawd, nws yog ib qho me me thiab lub teeb laser thiab muaj peev xwm ua tiav cov khoom siv hluav taws xob siab uas tuaj yeem ua lub teeb pom kev zoo tshaj plaws ntawm qhov kev ncua deb rau qee qhov xwm txheej uas muaj qhov xav tau nruj rau ntim thiab qhov hnyav, xws li tus neeg sib ntaus sib tua thiab UAV siv rau qee qhov xwm txheej.

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1064nm YAG Laser-15mJ-20

Nws yog passively Q-hloov Nd: YAG laser nrog 1064nm wavelength, ≥15mJ ncov zog thiab ≤8mrad divergence kaum.Tsis tas li ntawd, nws yog ib qho me me thiab lub teeb laser uas tuaj yeem ua lub teeb pom kev zoo tshaj plaws ntawm kev ncua deb ntawm qhov siab (20Hz).

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