905nmAPD ib leeg raj series
| Photoelectric yam ntxwv (TA 22 ± 3℃) | |||||||||
| Qauv | GD5210Y-2-2-T046 | GD5210Y-2-5-T046 | GD5210Y-2-8-T046 | GD5210Y-2-2-LCC3 | GD5210Y-2-5-LCC3 | GD5210Y-2-2-P | GD5210Y-2-5-P | Array | |
| Daim ntawv pob | TSI-46 | TSI-46 | TSI-46 | LCC 3 | LCC 3 | ntim yas | ntim yas | PCB | |
| Photosensitive nto diam (mm) | 0.23 | 0.50 ib | 0.80 ib | 0.23 | 0.50 ib | 0.23 | 0.50 ib | customized | |
| Spectral teb ntau yam (nm) | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | |
| Peak teb wavelength (nm) | 905 ib | 905 ib | 905 ib | 905 ib | 905 ib | 905 ib | 905 ib | 905 ib | |
| Teb λ = 905nm Φ = 1μW M = 100 (A / W) | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | |
| Tsaus tam sim no M = 100 (nA) | Hom | 0.2 | 0.4 | 0.8 ua | 0.2 | 0.4 | 0.2 | 0.4 | Raws li photosensitivity |
| Qhov siab tshaj plaws | 1.0 | 1.0 | 2.0 | 1.0 | 1.0 | 1.0 | 1.0 | Ib sab | |
| Teb sijhawm λ = 905nm R1 = 50Ω(ns) | 0.6 | 0.6 | 0.6 | 0.6 | 0.6 | 0.6 | 0.6 | Raws li photosensitive nto | |
| Ua hauj lwm voltage kub coefficient T = -40 ℃ ~ 85 ℃ (V / ℃) | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | |
| Tag nrho capacitance M = 100 f = 1 MHz (pF) | 1.0 | 1.2 | 2.0 | 1.0 | 1.2 | 1.0 | 1.2 |
Raws li photosensitive nto | |
| tawg voltage IR = 10 μA (V) | Yam tsawg kawg nkaus | 130 | 130 | 130 | 130 | 130 | 130 | 130 | 160 |
| Qhov siab tshaj plaws | 220 | 220 | 220 | 220 | 220 | 220 | 220 | 200 | |
Pem hauv ntej Plane Chip Structure
Kev kub ceev teb
Kev nce qib siab
Tsawg junction capacitance
Tsawg suab nrov
Array loj thiab photosensitive nto tuaj yeem kho tau
Laser ntau yam
Lidar
Laser ceeb toom
