1064nmAPD ib leeg raj series
| Photoelectric yam ntxwv (TA 22 ± 3℃) | |||||
| Qauv | GD5210Y-3-500 | GD5210Y-3-800 | GD5211 Y | ||
| Daim ntawv pob | TSI-46 | TSI-46 | TSI-52 | ||
| Photosensitive nto diam (mm) | 0.5 | 0.8 ua | 0.8 ua | ||
| Spectral teb ntau yam (nm) | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | ||
| Peak teb wavelength (nm) | 980 ua | 980 ua | 980 ua | ||
| Teb | λ = 905nm Φ = 1μW M = 100 | 58 | 58 | 58 | |
| λ = 1064nm Φ = 1μW M = 100 | 36 | 36 | 36 | ||
| Tsaus tam sim no M = 100 (nA) | Hom | 2 | 4 | 10 | |
| Qhov siab tshaj plaws | 20 | 20 | 20 | ||
| Lub sij hawm teb λ = 800nm R1 = 50Ω(ns) | 2 | 3 | 3.5 | ||
|
Ua hauj lwm voltage kub coefficient T = -40 ℃ ~ 85 ℃ (V / ℃) | 2.2 | 2.2 | 2.2 | ||
| Tag nrho capacitance M = 100 f = 1MHz (pF) | 1.0 | 1.5 | 3.5 | ||
| Breakdown voltage IR = 10 μA (V) | Yam tsawg kawg nkaus | 220 | 220 | 350 | |
| Qhov siab tshaj plaws | 580 | 580 | 500 | ||
Pem hauv ntej Plane Chip Structure
Siab teb zaus
Kev nce qib siab
Laser ntau yam
Lidar
Laser ceeb toom
Pem hauv ntej Plane Chip Structure
Siab teb zaus
Kev nce qib siab
Laser ntau yam
Lidar
Laser ceeb toom
