1064nmAPD module series

Qauv: GD6212Y / GD6213Y / GD6219Y

Lus piav qhia luv luv:

Cov cuab yeej yog 1064nm enhanced silicon avalanche photodiode module nrog ib tug built-in preamplifier Circuit Court, uas muaj peev xwm amplify tsis muaj zog tam sim no signals thiab hloov lawv mus rau hauv voltage teeb liab outputs, realizing cov txheej txheem hloov dua siab tshiab ntawm "optical-hluav taws xob-sib tham amplification".

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Technical Parameter

NTA

APPLICATION

Khoom cim npe

Photoelectric yam ntxwv (TA 22 ± 3℃)
Qauv	GD 6212 Y	GD 6213 y	GD6219 Y
Daim ntawv pob	TO-8	TO-8	TO-8
Photosensitive nto diam (mm)	0.8 ua	0.8 ua	3
Spectral teb ntau yam (nm)	400-1100 Nws	400-1100 Nws	400-1100 Nws
Kev ntsuas hluav taws xob (V)	350-500	350-500	350-500
Teb M = 100 I = 1064nm (kV/W)	150	200	280
Lub sijhawm nce (ns)	8.8 ib	2	7
Bandwidth (MHz)	40	175	50
Lub suab nrov sib npaug (pW / √Hz)	0.15	0.15	2.7
Ua hauj lwm voltage kub coefficient T = -40 ℃ ~ 85 ℃ (V / ℃)	2.2	2.2	2.4
Concentricity (μm)	≤ 50	≤ 50	≤ 50
Lwm cov qauv ntawm tib qhov kev ua tau zoo thoob ntiaj teb	c30950 ua	C30659-1060-R8BH	C30659-1060-3A

Pem hauv ntej Plane Chip Structure

Siab teb zaus

High detector rhiab heev

Laser ntau yam

Lidar

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