InGaAS-APD module series

Qauv: GD6510Y / GD6511Y / GD6512Y

Lus piav qhia luv luv:

Cov cuab yeej yog ib qho InGaAs avalanche photodiode module nrog lub preamplifier built-in Circuit Court, uas tuaj yeem hloov qhov tsis muaj zog.Tom qab lub teeb liab tam sim no yog amplified, nws yog hloov dua siab tshiab rau hauv ib tug voltage teeb liab tso zis kom paub txog "optical-hluav taws xob-sib nqus amplification" txheej txheem conversion.

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Technical Parameter

NTA

APPLICATION

Khoom cim npe

Photoelectric yam ntxwv (TA 22 ± 3℃)
Qauv	GD6510 Y	GD6511 Y	GD6512 Y
Daim ntawv pob	TO-8	TO-8	TO-8
Photosensitive nto diam (mm)	0.2	0.5	0.08 ib
Spectral teb ntau yam (nm)	1000-1700 Nws	1000-1700 Nws	1000-1700 Nws
Kev ntsuas hluav taws xob (V)	30 ~ 70	30 ~ 70	30 ~ 70
Teb M = 10 l = 1550nm (kV / W)	340	340	340
Lub sijhawm nce (ns)	5	10	2.3
Bandwidth (MHz)	70	35	150
Lub suab nrov sib npaug (pW / √Hz)	0.15	0.21 ib	0.11
Ua hauj lwm voltage kub coefficient T = -40 ℃ ~ 85 ℃ (V / ℃)	0.12	0.12	0.12
Concentricity (μm)	≤ 50	≤ 50	≤ 50
Lwm cov qauv ntawm tib qhov kev ua tau zoo thoob ntiaj teb	C3059-1550-R2A	/	C3059-1550-R08B

Pem hauv ntej Plane Chip Structure

Teb ceev

High detector rhiab heev

Laser ntau yam

Lidar

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