355nm APD ib leeg raj series
| Photoelectric yam ntxwv (TA 22 ± 3℃) | ||||
| Qauv | GD5210Y-0-1-T05 | GD5210Y-0-2-T05 | ||
| Daim ntawv pob | TO-5 | TO-5 | ||
| Photosensitive nto diam (mm) | 1.8 | 3.0 | ||
| Spectral teb ntau yam (nm) | 300-1100 Nws | 300-1100 Nws | ||
| Kev teb λ = 355nm Φ = 1μW M = 100 (A / W) | 22.5 ib | 22.5 ib | ||
| Tsaus tam sim no M = 100 (nA) | Hom | 3 | 15 | |
| Qhov siab tshaj plaws | 10 | 50 | ||
| Ua hauj lwm voltage kub coefficient T = -40 ℃ ~ 85 ℃ (V / ℃) | 0.4 | 0.4 | ||
| Tag nrho capacitance M = 100 f = 1MHz (pF) | 20 | 50 | ||
| Kev tawg voltage IR = 10μA (V) | Yam tsawg kawg nkaus | 80 | 80 | |
| Qhov siab tshaj plaws | 200 | 200 | ||
Pem hauv ntej Plane Chip Structure
Kev kub ceev teb
Siab tau
Kho mob
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