800nmAPD ib leeg raj series
| Photoelectric yam ntxwv (TA 22 ± 3℃) | |||||
| Qauv | GD5210Y-1-2-T046 | GD5210Y-1-5-T046 | GD5210Y-1-2-LCC3 | GD5210Y-1-5 -LCC 3 | |
| Daim ntawv pob | TSI-46 | TSI-46 | LCC 3 | LCC 3 | |
| Photosensitive nto diam (mm) | 0.23 | 0.50 ib | 0.23 | 0.50 ib | |
| Spectral teb ntau yam (nm) | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | 400-1100 Nws | |
| Peak teb wavelength (nm) | 800 | 800 | 800 | 800 | |
| λ = 800nm Φ = 1μW M = 100 (A / W) | 55 | 55 | 55 | 55 | |
| Tsaus tam sim no | Hom | 0.05 Nws | 0.10 | 0.05 Nws | 0.10 |
| M = 100 (nA) | Qhov siab tshaj plaws | 0.2 | 0.4 | 0.2 | 0.4 |
| Lub sij hawm teb λ = 800nm R1 = 50Ω(ns) | 0.3 | 0.3 | 0.3 | 0.3 | |
| Ua hauj lwm voltage kub coefficient T = -40 ℃ ~ 85 ℃ (V / ℃) | 0.5 | 0.5 | 0.5 | 0.5 | |
| Tag nrho capacitance M = 100 f = 1MHz (pF) | 1.5 | 3.0 | 1.5 | 3.0 | |
| Kev tawg voltage IR = 10μA (V) | Yam tsawg kawg nkaus | 80 | 80 | 80 | 80 |
| Qhov siab tshaj plaws | 160 | 160 | 160 | 160 | |
Pem hauv ntej Plane Chip Structure
Kev kub ceev teb
Kev nce qib siab
Tsawg junction capacitance
Tsawg suab nrov
Laser ntau yam
Lidar
Laser ceeb toom
