InGaAs APD Modules

Qauv: GD6510Y/GD6511Y/GD6512Y

Lus piav qhia luv luv:

Nws yog indium gallium arsenide avalanche photodiode module nrog pre-amplification Circuit Court uas ua rau tsis muaj zog tam sim no teeb liab yuav tsum tau amplified thiab hloov mus rau hauv voltage teeb liab kom ua tiav cov txheej txheem hloov dua siab tshiab ntawm photon-photoelectric-signal amplification.

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Technical Parameter

Khoom cim npe

Nta

Frontside illuminated tiaj tus nti
Kev kub ceev teb
High rhiab heev ntawm detector

Daim ntawv thov

Laser ntau yam
Laser kev sib txuas lus
Laser ceeb toom

Photoelectric parameter(@Ta = 22 ± 3 ℃)

Yam khoom #	Ntim qeb	Txoj kab uas hla ntawm photosensitive nto (mm)	Spectral teb ntau yam (nm)	Breakdown voltage (V)	Teb M = 10 L = 1550 nm (kV/W)	Lub sij hawm sawv (ns)	Bandwidth (MHz)	Kub Coefficient T_a= -40 ℃ ~ 85 ℃ (V / ℃)	Lub suab sib npaug zog (pW / √Hz)	Concentricity (μm)	Hloov hom hauv lwm lub tebchaws
GD6510 Y	TO-8	0.2	1000-1700 Nws	30 x70	340	5	70	0.12	0.15	≤ 50	C3059-1550-R2A
GD6511 Y		0.5				10	35		0.21 ib		—
GD6512 Y		0.08 ib				2.3	150		0.11		C3059-1550-R08B