dfbf ua

Plaub-quadrant Si PIN

Plaub-quadrant Si PIN

Qauv: GT111/GT112/GD3250Y/GD3249Y/GD3244Y/GD3245Y/GD32413Y/GD32414Y/GD32415Y

Lus piav qhia luv luv:

Nws muaj plaub yam tib yam ntawm Si PIN photodiode uas ua haujlwm nyob rau hauv rov qab thiab muab siab rhiab heev xws li UV rau NIR.Lub ncov teb wavelength yog 980nm.Teb: 0.5 A / W ntawm 1064 nm.


  • f614 ua
  • 6 tx49b1
  • 46b79 ib
  • 374c 3

Technical Parameter

Khoom cim npe

Nta

  • Tsawg tsaus nti tam sim no
  • Siab teb
  • Zoo quadrant sib xws
  • Qhov chaw dig muag me me 

Daim ntawv thov

  • Laser kev taw qhia, tsom, thiab taug qab
  • Rau cov cuab yeej tshawb nrhiav
  • Laser micro-txoj hauj lwm, kev saib xyuas qhov chaw thiab kev ntsuas qhov tseeb

Photoelectric parameter (@Tas = 25 ℃)

Yam khoom #

 

Ntim qeb

Txoj kab uas hla

ntawm photosensitive nto (mm)

Spectral teb ntau yam

(nm)

Peak teb wavelength

Teb

L = 1064 nm

(kV/W)

 

Tsaus tam sim no

(nA)

 

Lub sij hawm sawv

L = 1064 nm

RL= 50Ω(n)

 

Kev sib tshuam capacitance

f = 1 MHz

(pF)

Breakdown voltage

(V)

 

TSI GT111

TO-8

Ф 4

 

 

400-1100 Nws

 

 

 

 

980 ua

0.3

5 (VR= 40V)

15 (VR= 40V)

5 (VR= 10V)

100

TSI GT112

F 6

7 (VR= 40V)

20 (VR= 40V)

7 (VR= 10V)

GD3250 Y

F 8

10 (VR= 40V)

25 (VR= 40V)

10 (VR= 10V)

GD3249 Y

TSI-20

Ф10

15 (VR= 40V)

30 (VR= 40V)

15 (VR= 10V)

GD3244 Y

TSO-31-7

Ф10

0.4

20 (VR= 135V)

20 (VR= 135V)

10 (VR= 135V)

300

GD3245 Y

Ф16

50 (VR= 135V)

30 (VR= 135V)

20 (VR= 135V)

GD32413 Y

MBCY026-P6

Ф14 ib

40 (VR= 135V)

25 (VR= 135V)

16 (VR= 135V)

GD32414Y

TO-8

F5.3

400-1150

0.5

4.8 (VR= 140V)

15 (VR= 140V)

4.2 (VR= 140V)

≥300

GD32415 Y

MBCY026-W7W

F11.3

≤ 20 (VR= 180V)

20 (VR= 180V)

10 (VR= 180V)


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