905nm PIB
Nta
- Frontside illuminated tiaj tus nti
- Kev kub ceev teb
- Siab APD nce
- Tsawg junction capacitance
- Tsawg suab nrov
- Array loj thiab photosensitive nto tuaj yeem kho tau.
Daim ntawv thov
- Laser ntau yam
- Laser radar
- Laser ceeb toom
Photoelectric parameter (@Ta = 22 ± 3 ℃)
Yam khoom # | Ntim qeb | Txoj kab uas hla ntawm photosensitive nto (mm) | Spectral teb ntau yam (nm) |
Peak teb wavelength (nm) | Teb l = 905 nm φ e = 1μW M = 100 (A/W) | Teb sijhawm l = 905 nm RL= 50Ω (ns) | Tsaus tam sim no M = 100 (nA) | Kub Coefficient T = -40 ℃ ~ 85 ℃ (V / ℃)
| Tag nrho capacitance M = 100 f = 1 MHz (pF)
| Kev tawg hluav taws xob IR= 10 μA (V) | ||
Ntaus. | Max. | Min | Max | |||||||||
GD5210Y-2-2-TO46 | TSI-46 | 0.23 |
400-1100 Nws
|
905 ib
| 55
|
0.6 | 0.2 | 1.0 | 0.9 | 1.0 | 130 | 220 |
GD5210Y-2-5-TO46 | TSI-46 | 0.50 ib | 0.4 | 1.0 | 1.2 | |||||||
GD5210Y-2-8-TO46 | TSI-46 | 0.80 ib | 0.8 ua | 2.0 | 2.0 | |||||||
GD5210Y-2-2-LCC3 | LCC 3 | 0.23 | 0.2 | 1.0 | 1.0 | |||||||
GD5210Y-2-5-LCC3 | LCC 3 | 0.50 ib | 0.4 | 1.0 | 1.2 | |||||||
GD5210Y-2-2-P | Cov hnab yas | 0.23 | 0.2 | 1.0 | 1.0 | |||||||
GD5210Y-2-5-P | Cov hnab yas | 0.50 ib | 0.4 | 1.0 | 1.2 | |||||||
Array | PCB | Customized | Raws li photosensitive nto | Raws li photosensitive nto |
| Raws li photosensitive nto | 160 | 200 |