dfbf ua

905nm PIB

905nm PIB

Qauv: GD5210Y-2-2-TO46 / GD5210Y-2-5-TO46 / GD5210Y-2-8-TO46 / GD5210Y-2-2-LCC3 / GD5210Y-2-5-LCC3 / GD5210Y-2-2-P / GD5210Y-2-5-P / Array

Lus piav qhia luv luv:

Nws yog Si avalanche photodiode uas muab siab rhiab heev ntawm UV rau NIR.Lub ncov teb wavelength yog 905nm.


  • f614 ua
  • 6 tx49b1
  • 46b79 ib
  • 374c 3

Technical Parameter

Khoom cim npe

Nta

  • Frontside illuminated tiaj tus nti
  • Kev kub ceev teb
  • Siab APD nce
  • Tsawg junction capacitance
  • Tsawg suab nrov
  • Array loj thiab photosensitive nto tuaj yeem kho tau.

Daim ntawv thov

  • Laser ntau yam
  • Laser radar
  • Laser ceeb toom

Photoelectric parameter (@Ta = 22 ± 3 ℃)

Yam khoom #

Ntim qeb

Txoj kab uas hla ntawm photosensitive nto (mm)

Spectral teb ntau yam (nm)

 

Peak teb wavelength

(nm)

Teb

l = 905 nm

φ e = 1μW

M = 100

(A/W)

Teb sijhawm

l = 905 nm

RL= 50Ω

(ns)

Tsaus tam sim no

M = 100

(nA)

Kub Coefficient

T = -40 ℃ ~ 85 ℃

(V / ℃)

 

Tag nrho capacitance

M = 100

f = 1 MHz

(pF)

 

Kev tawg

hluav taws xob

IR= 10 μA

(V)

Ntaus.

Max.

Min

Max

GD5210Y-2-2-TO46

TSI-46

0.23

 

 

 

 

 

 

400-1100 Nws

 

 

 

 

 

 

 

905 ib

 

 

 

 

55

 

 

 

 

 

 

 

0.6

0.2

1.0

0.9

1.0

130

220

GD5210Y-2-5-TO46

TSI-46

0.50 ib

0.4

1.0

1.2

GD5210Y-2-8-TO46

TSI-46

0.80 ib

0.8 ua

2.0

2.0

GD5210Y-2-2-LCC3

LCC 3

0.23

0.2

1.0

1.0

GD5210Y-2-5-LCC3

LCC 3

0.50 ib

0.4

1.0

1.2

GD5210Y-2-2-P

Cov hnab yas

0.23

0.2

1.0

1.0

GD5210Y-2-5-P

Cov hnab yas

0.50 ib

0.4

1.0

1.2

Array

PCB

Customized

Raws li photosensitive nto

Raws li photosensitive nto

 

Raws li photosensitive nto

160

200


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  • Tom ntej: