dfbf ua

355nm PIB

355nm PIB

Qauv: GD5210Y-0-1-TO5 / GD5210Y-0-2-TO5

Lus piav qhia luv luv:

Nws yog Si avalanche photodiode nrog loj photosensitive nto thiab txhim kho UV.Nws muab siab rhiab heev ntawm UV rau NIR.


  • f614 ua
  • 6 tx49b1
  • 46b79 ib
  • 374c 3

Technical Parameter

Khoom cim npe

Nta

  • Frontside illuminated tiaj tus nti
  • Kev kub ceev teb
  • Siab APD nce

Daim ntawv thov

  • Kho mob
  • Biology

Photoelectric parameter(@Ta = 22 ± 3 ℃)

Yam khoom #

Ntim qeb

Txoj kab uas hla ntawm photosensitive nto (mm)

Spectral teb ntau yam (nm)

Teb

Luas = 355 nm

φe= 1 mW

M = 100

(A/W)

Tsaus tam sim no

M = 100

(nA)

Kub Coefficient

T = -40 ℃ ~ 85 ℃

(V / ℃)

 

Tag nrho capacitance

M = 100

f = 1 MHz

(pF)

 

Kev tawg

hluav taws xob

IR = 10 μA

(V)

VR = 10V

VR = 8 V

Ntaus.

Max.

Min.

Max.

GD5210Y-0-1-TO5

TO-5

1.8

300-1100 Nws

0.22

6.75 ib

3

10

0.4

20

80

200

GD5210Y-0-2-TO5

TO-5

3.0

15

50

50


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