Plaub-quadrant PIN ib leeg raj series

Qauv: GT111 / GT112 / GD3250Y / GD3249Y / GD3244Y / GD3245Y / GD32413Y / GD32414Y / GD32415Y

Lus piav qhia luv luv:

Cov cuab yeej yog plaub silicon PIN photodiodes nrog tib lub tsev, ua haujlwm nyob rau hauv cov xwm txheej ntawm kev tsis ncaj ncees, cov lus teb spectral ranges los ntawm pom lub teeb mus rau ze-infrared, lub ncov teb wavelength yog 980nm, thiab cov lus teb ntawm 1064nm tuaj yeem ncav cuag 0.5A. /W.

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Technical Parameter

NTA

APPLICATION

Khoom cim npe

Photoelectric yam ntxwv (＠Ta＝22 ± 3℃)
Qauv	TSI GT111	TSI GT112	GD3250 Y	GD3249 Y	GD3244 Y	GD3245 Y	GD32413 Y	GD32414Y	GD32415 Y
Daim ntawv pob	TO-8	TO-8	TO-8	TSI-20	TSO-31-7	TSO-31-7	MBCY026-P6	TO-8	MBCY026-W7W
Photosensitive nto qhov loj (mm)	Φ 4	Φ6	Φ8	Φ10	Φ10	Φ16	Φ14	Φ5.3	Φ11.3
Spectral teb ntau yam (nm)	400-1100 Nws	400-1100 Nws	400-1100 Nws	400-1100 Nws	400-1100 Nws	400-1100 Nws	400-1100 Nws	400-1150 Nws	400-1150 Nws
Peak teb wavelength (nm)	980 ua	980 ua	980 ua	980 ua	980 ua	980 ua	980 ua	980 ua	980 ua
Kev teb λ = 1064nm(A/W)	0.3	0.3	0.3	0.3	0.4	0.4	0.4	0.5	0.5
Tsaus tam sim no (nA)	5 (V_R= 40V)	7 (V_R= 40V)	10 (V_R= 40V)	15 (V_R= 40V)	20 (V_R= 135V)	50 (V_R= 135V)	40 (V_R= 135V)	4.8 (V_R= 140V)	≤ 20 (V_R= 180V)
Lub sij hawm sawv hauv = 1064nm RL = 50Ω (ns)	15 (V_R= 40V)	20 (V_R= 40V)	25 (V_R= 40V)	30 (V_R= 40V)	20 (V_R= 135V)	30 (V_R= 135V)	25 (V_R= 135V)	15 (V_R= 140V)	20 (V_R= 180V)
Junction capacitance f = 1 MHz (pF)	5 (V_R= 10V)	7 (V_R= 10V)	10 (V_R= 10V)	15 (V_R= 10V)	10 (V_R= 135V)	10 (V_R= 135V)	16 (V_R= 135V)	4.2 (V_R= 140V)	10 (V_R= 180V)
Kev ntsuas hluav taws xob (V)	100	100	100	100	300	300	300	≥300	≥250

Tsawg tsaus nti tam sim no

Siab teb

Zoo quadrant sib xws

Me qhov muag tsis pom kev

Laser aiming, taw qhia taug qab thiab tshawb nrhiav ntaus ntawv

Laser micro-txoj hauj lwm, kev saib xyuas qhov chaw thiab lwm yam kev ntsuas qhov tseeb